? 2008 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c 100 v v dgr t j = 25 c to 175 c, r gs = 1m 100 v v gsm transient 30 v i d25 t c = 25 c 130 a i lrms lead current limit, rms 75 a i dm t c = 25 c, pulse width limited by t jm 350 a i a t c = 25 c65a e as t c = 25 c 500 mj p d t c = 25 c 360 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (to-220) 1.13 / 10 nm/lb.in. weight to-220 3.0 g to-263 2.5 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 100 v v gs(th) v ds = v gs , i d = 250 a 2.5 4.5 v i gss v gs = 20v, v ds = 0v 200 na i dss v ds = v dss 5 a v gs = 0v t j = 150 c 250 a r ds(on) v gs = 10v, i d = 25a, notes 1, 2 9.1 m trenchmv tm power mosfet n-channel enhancement mode avalanche rated ixta130n10t IXTP130N10T v dss = 100v i d25 = 130a r ds(on) 9.1m ds99649b(07/08) g = gate d = drain s = source tab = drain features z ultra-low on resistance z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect z 175 c operating temperature advantages z easy to mount z space savings z high power density applications z automotive - motor drives - 42v power bus - abs systems z dc/dc converters and off-line ups z primary switch for 24v and 48v systems z distributed power architechtures and vrms z electronic valve train systems z high current switching applications z high voltage synchronous recifier to-263 (ixta) to-220 (ixtp) g s g d s (tab) (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixta130n10t IXTP130N10T symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 60a, note 1 55 93 s c iss 5080 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 635 pf c rss 95 pf t d(on) resistive switching times 30 ns t r v gs = 10v, v ds = 0.5 ? v dss , i d = 25a 47 ns t d(off) r g = 5 (external) 44 ns t f 28 ns q g(on) 104 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 25a 30 nc q gd 29 nc r thjc 0.42 c/w r thch to-220 0.50 c/w source-drain diode symbol test conditions characteristic values t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 130 a i sm pulse width limited by t jm 350 a v sd i f = 25a, v gs = 0v, note 1 1.0 v t rr 67 ns i rm 4.7 a q rr 160 nc notes: 1. pulse test, t 300 s; duty cycle, d 2%. 2. on through-hole packages, r ds(on) kelvin test contact location must be 5 mm or less from the package body. to-263 (ixta) outline pins: 1 - gate 2 - drain 3 - source 4, tab - drain pins: 1 - gate 2 - drain 3 - source 4, tab - drain to-220 (ixtp) outline ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 a1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 7.11 8.13 .280 .320 e 9.65 10.29 .380 .405 e1 6.86 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.38 0 .015 r 0.46 0.74 .018 .029 i f = 0.5 ? i s , -di/dt = 100a/ s v r = 0.5 ? v dss , v gs = 0v
? 2008 ixys corporation, all rights reserved ixta130n10t IXTP130N10T fig. 1. output characteristics @ 25oc 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 v ds - volts i d - amperes v gs = 10v 8v 7v 6v fig. 2. extended output characteristics @ 25oc 0 40 80 120 160 200 240 280 012345678910 v ds - volts i d - amperes v gs = 10v 9v 8v 6v 7v fig. 3. output characteristics @ 150oc 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 v ds - volts i d - amperes v gs = 10v 9v 8v 5v 6v 7v fig. 4. r ds(on) normalized to i d = 65a value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 130a i d = 65a fig. 5. r ds(on) normalized to i d = 65a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 0 40 80 120 160 200 240 280 i d - amperes r ds(on) - normalized v gs = 10v 15v - - - - t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 20 40 60 80 100 120 140 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external lead current limit for to-263 (7-lead) external lead current limit for to-3p, to-220, & to-263
ixys reserves the right to change limits, test conditions, and dimensions. ixta130n10t IXTP130N10T fig. 7. input admittance 0 30 60 90 120 150 180 210 240 270 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 v gs - volts i d - amperes t j = - 40oc 25oc 150oc fig. 8. transconductance 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 20 40 60 80 100 120 140 160 180 200 220 i d - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 9. forward voltage drop of intrinsic diode 0 30 60 90 120 150 180 210 240 270 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 102030405060708090100110 q g - nanocoulombs v gs - volts v ds = 50v i d = 25a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2008 ixys corporation, all rights reserved ixta130n10t IXTP130N10T ixys ref: t_130n10t (4v) 7-29-08-a fig. 14. resistive turn-on rise time vs. drain current 22 26 30 34 38 42 46 50 54 58 62 25 30 35 40 45 50 i d - amperes t r - nanoseconds t j = 125oc t j = 25oc r g = 5 v gs = 10v v ds = 50v fig. 15. resistive turn-on switching times vs. gate resistance 20 30 40 50 60 70 80 90 100 110 120 130 4 6 8 10 12 14 16 18 20 r g - ohms t r - nanoseconds 20 23 26 29 32 35 38 41 44 47 50 53 t d(on) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 10v v ds = 50v i d = 50a i d = 25a fig. 16. resistive turn-off switching times vs. junction temperature 26 28 30 32 34 36 38 40 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 40 44 48 52 56 60 64 68 t d(off) - nanoseconds i d = 25a i d = 50a t f t d(off) - - - - r g = 5 , v gs = 10v v ds = 50v fig. 17. resistive turn-off switching times vs. drain current 24 26 28 30 32 34 36 38 40 25 30 35 40 45 50 i d - amperes t f - nanoseconds 38 42 46 50 54 58 62 66 70 t d(off) - nanoseconds t f t d(off) - - - - r g = 5 , v gs = 10v v ds = 50v t j = 125oc t j = 25oc fig. 13. resistive turn-on rise time vs. junction temperature 25 30 35 40 45 50 55 60 65 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 5 v gs = 10v v ds = 50v i d = 50a i d = 25a fig. 18. resistive turn-off switching times vs. gate resistance 30 40 50 60 70 80 90 100 4 6 8 101214161820 r g - ohms t f - nanoseconds 30 50 70 90 110 130 150 170 t d(off) - nanoseconds i d = 50a i d = 25a 25a < i d < 50a t r t d(on) - - - - t j = 125oc, v gs = 10v v ds = 50v
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